Torex Semiconductor Launches New 650V SiC Schottky Barrier Diodes with Enhanced Surge Current Immunity
Torex Semiconductor Co., Ltd. (Tokyo, Japan) has developed the “XBSC41 / XBSC42 / XBSC43 series” of 650V SiC Schottky Barrier Diodes, engineered for strong resistance against inrush and surge currents.
This new series offers a 650V breakdown voltage and is available in 6A, 8A, and 10A current ratings, providing flexibility for various applications and design requirements. The diodes contribute to high-efficiency power conversion by suppressing switching losses through their low reverse recovery characteristics.
Furthermore, the XBSC41/XBSC42/XBSC43 series achieves reduced power loss and high-efficiency operation by minimizing its Figure of Merit (FOM). It also significantly enhances IFSM (Surge Forward Current) withstand capability, ensuring stable operation even in environments with severe surge or inrush currents, thereby improving overall system reliability.
This series combines high efficiency and high reliability, leveraging the fast switching characteristics and low loss performance inherent to SiC devices. It enables designs with ample margin during startup and inrush current events. The XBSC41/XBSC42/XBSC43 series is suitable for a wide range of applications where reliability is crucial, including switching power supplies, white goods, and general-purpose inverters.
For more details on the product, please visit:
https://product.torexsemi.com/ja/news/product/20260120_4886
